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May 2003
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench ? MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
? 80 A, 30 V
R DS(ON) = 6.5 m ? @ V GS = 10 V
R DS(ON) = 8.5 m ? @ V GS = 4.5 V
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R DS(ON)
and fast switching speed.
? Critical DC electrical parameters specified at
elevated temperature
? High performance trench technology for extremely
low R DS(ON)
? 175 ° C maximum junction temperature rating
G
D
G
D
G
D
S
TO-220
FDP Series
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
80
A
– Pulsed
(Note 1)
240
P D
T J , T STG
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Junction Temperature Range
68
0.45
–65 to +175
W
W/ ° C
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.2
62.5
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDB6670AL
FDP6670AL
Device
FDB6670AL
FDP6670AL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
? 2003 Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)
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相关代理商/技术参数
FDB6670AL_Q 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB6670AS 功能描述:MOSFET 30V N-Channel PT SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB6670AS_NL 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET
FDB6670S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB6670S 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK
FDB6676 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB6676S 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB6676S_Q 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube